千兆级CMOS DRAM器件用原子层沉积Al/sub 2/O/sub 3/栅极介质的特性

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852763

Dae-gyu Park, Heung-Jae Cho, C. Lim, I. Yeo, J. Roh, Chung-Tae Kim, J. Hwang

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引用次数: 10

摘要

研究了采用原子层沉积(ALD)法制备的用于千兆级CMOS DRAM器件的Al/sub 2/O/sub 3/栅极介质的特性。Al/sub 2/O/sub 3/ Si MOS系统的界面态密度/spl sim/7/spl次/10/sup 10/ eV/sup -1/ cm/sup -2/接近中隙，具有优异的可靠性和低栅漏电流。描述了p/ nmosfet在电流驱动性、跨导(Gm)和亚阈值摆幅方面的特性。

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Characteristics of Al/sub 2/O/sub 3/ gate dielectric prepared by atomic layer deposition for giga scale CMOS DRAM devices

This paper demonstrates characteristics of Al/sub 2/O/sub 3/ gate dielectric prepared by atomic layer deposition (ALD) for giga scale CMOS DRAM devices. Interface state density /spl sim/7/spl times/10/sup 10/ eV/sup -1/ cm/sup -2/ near the midgap and excellent reliability with a low gate leakage current were attained from Al/sub 2/O/sub 3//Si MOS system. p/nMOSFETs characteristics in terms of current drivability, transconductance (Gm), and subthreshold swing are described.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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