微电子封装互连材料银烧结层的热性能研究

Proceedings of the 2014 37th International Spring Seminar on Electronics Technology Pub Date : 2014-05-07 DOI:10.1109/ISSE.2014.6887568

R. Kisiel, B. Platek, M. Myśliwiec

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引用次数: 0

摘要

本文研究了作为SiC晶片与DBC衬底互连材料的银烧结层的热性能。在我们的研究中，用红外照相机测量了银烧结层的热性能。在69°C至221°C的温度范围内测量了导热系数的变化。厚度为15 μm的片状微颗粒烧结层的导热系数在7 ~ 10 W/mK之间，且在此温度范围内较为稳定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Thermal properties of Ag sintered layer used as interconnect material in microelectronics packaging

The paper deals with the thermal properties of Ag sintered layer used as interconnect material for SiC die assembly to DBC substrate. In our investigation an IR camera were used for measurement of thermal properties of Ag sintered layers. The changes of thermal conductivity were measured in temperature range from 69°C up to 221°C. The thermal conductivity of Ag sintered layers thickness 15 μm, made from micro particles, a flake shape, was in the range 7-10 W/mK and is stable in this temperature range.

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Proceedings of the 2014 37th International Spring Seminar on Electronics Technology

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