具有高电平输入功率保护的LNA设计

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363) Pub Date : 1900-01-01 DOI:10.1109/CRMICO.1999.815143

L.M. Abolduyev, V. Vald-Perlov, V. Minnebaev

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摘要

在设计LNA时，需要对放大器的方案和拓扑进行优化，对有源元件进行选择，对保护进行优化，对可靠性和价格进行优化。在FET或HEMT LNA的输入端选择可能的功率电平。图表对应于GaAs FET或HEMT的平均技术变体。从恒功率的角度讨论了砷化镓晶体管可能的扩散脉冲功率。

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Designing of LNA with protection from high level input power

In designing LNA it is necessary to conduct optimisation of scheme and topology of amplifier, choice of active element, protection, as well as reliability and price. Possible power level at the input of FET or HEMT LNA is chosen. Graphs correspond to average technological variant of GaAs FET or HEMT. Possible diffuse impulse power in GaAs transistor is discussed with respect to constant power.

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1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)

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