三种不同技术节点2.5 ghz LC压控振荡器性能比较

2019 Devices for Integrated Circuit (DevIC) Pub Date : 2019-03-01 DOI:10.1109/DEVIC.2019.8783601

Shrabanti Das, S. Chatterjee

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引用次数: 1

摘要

本文对2.5 GHz的LC压控振荡器(VCO)的性能进行了比较，在保持电路相同的情况下，观察不同技术节点对相同器件性能的影响。因此，作为案例研究，我们在Cadence Spectre上设计了三个LC-VCO实例，采用GPDK 45nm、90nm和180nm技术，分别采用0.8 V、1v和1.2 V三种不同的电源电平。观察到45nm、90nm和180nm工艺的相位噪声(PN)分别为- 120.8 dBc/Hz、- 124.64 dBc/Hz和- 126.12 dBc/Hz @ 1MHz偏移量。随后还测量了输出功率、质量因数(FOM)和$\mathbf{K}_{\mathbf{VCO}}$。在45nm、90nm和180nm工艺节点上获得的最佳FOM分别为- 181.7dB、- 184.9dB和- 186.2dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Comparison of 2.5-GHz LC Voltage-Controlled Oscillator for Three Different Technology Nodes

This paper has been written to compare the performances of LC Voltage Controlled Oscillator (VCO) at 2.5 GHz to see the effects of device performances with different technology node on the same while keeping the circuits identical. Accordingly, as a case study, three instances of LC-VCO have been designed in Cadence Spectre using GPDK 45nm, 90nm, and 180nm technology and three different power supply levels of 0.8 V, 1 V, and 1.2 V respectively. ObservedPhase Noise (PN) for 45nm, 90nm, and 180nm technology are −120.8 dBc/Hz, −124.64 dBc/Hz and −126.12 dBc/Hz @ 1MHz offset respectively. Output power, Figure of Merit (FOM) and $\mathbf{K}_{\mathbf{VCO}}$ also have been measured subsequently. The best possible FOM obtained are −181.7dB, −184.9dB and −186.2dB for 45nm, 90nm and 180nm technology node respectively.

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2019 Devices for Integrated Circuit (DevIC)

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