采用FinFET技术的绝热动态逻辑全局互连设计

Himani Bhardwaj, Shruti Jain, Harsh Sohal
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引用次数: 1

摘要

几十年来,CMOS技术一直主导着VLSI设计。虽然它提供了高速度和包装密度,但随着我们缩小技术规模,也会出现短通道效应的问题。此外,随着技术尺寸的减小,功耗问题已经开始占主导地位,当技术达到深亚微米水平时,功耗问题进一步增加。这是导致转向finfet等先进技术的因素之一。finfet用于减少泄漏电流,但在功耗方面也被证明是一种很有前途的技术。本文介绍了利用MOSFET技术和FinFET技术实现的数字逆变器。此外,逆变电路采用绝热动态逻辑实现,以节省功耗。这些逆变电路被插入到互连电路之间作为一种应用。电路采用45nm技术实现,输入电源为1V。与使用ADL Schmitt触发电路的互连电路相比,采用FinFET技术的ADL CMOS逆变器的互连电路功耗降低62%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of Global Interconnects using Adiabatic Dynamic Logic employing FinFET Technology
CMOS technology has been dominating VLSI design for a few decades. Although, it provides high speed and packing density, there also arises the problem of short channel effects as we scale down the technology size. Also, with the decrease in technology size, power consumption issues have started to dominate which further increases as the technology reaches to deep sub-micron level. This is one of the factors which provide a cause to switch to advanced technologies like FinFETs. FinFETs are used to reduce leakage currents but also proves to be a promising technology in terms of power consumption. In this paper, digital inverters are presented using MOSFET technology and FinFET technology. Further, the inverter circuits are implemented using adiabatic dynamic logic to conserve power consumption. These inverter circuits are inserted in between the interconnect circuits as an application. The circuits are implemented using 45nm technology with the input supply of 1V. The proposed interconnect circuit using ADL CMOS inverter using FinFET technology shows 62% decrease in power consumption as compared to the interconnect circuit using ADL Schmitt trigger circuit.
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