3.0 nm no生长栅介电薄膜的高应力场诱导漏电流

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496391

Z. Yao, H. B. Harrison, S. Dimitrijev, Y. Yeow

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引用次数: 0

摘要

本文研究了在3.0 nm氧化氮(NO)栅介质薄膜中应力诱发漏电流(SILC)。在高场应力下，与N/sub 2/O氧化物或纯氧化物相比，采用3.0 nm no生长薄膜的MOS电容器具有更低的SILC。

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High field stress induced leakage current in 3.0-nm NO-grown gate dielectric films

In this paper, stress induced leakage current (SILC) has been investigate in 3.0-nm nitric oxide (NO) grown gate dielectric films. MOS capacitors with 3.0-nm NO-grown films have much lower SILC compared to those reported results with N/sub 2/O oxides or pure oxides under high field stresses.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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