A. Solignac, R. Guerrero, M. Pannetier-Lecoeur, P. Lecoeur, G. Agnus
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Spin electronics sensors can be used as magnetic field sensors in various applications such as current sensing, non-destructive testing or compasses. While metallic layers are used for most of the room temperature applications, oxide materials exhibit very good performances for low temperature applications. Here we present the principle of an all-oxide field sensor, which could offer field sensitivity in the sub-femtotesla range. We present the magnetic tunnel junction developed for this purpose and give the performance in term of magnetoresistance and noise.
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