基于细丝的RRAM的基本可变性限制

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838348

A. Grossi, E. Nowak, C. Zambelli, C. Pellissier, S. Bernasconi, G. Cibrario, K. E. Hajjam, R. Crochemore, J. Nodin, P. Olivo, L. Perniola

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引用次数: 92

摘要

虽然电阻式RAM (RRAM)被视为NAND闪存的替代品，但其可变性和循环理解仍然是一个主要障碍。在成形、设置、复位和循环操作过程中，对多比特RRAM阵列进行了广泛的表征，从而可以量化其固有的可变性因素。结果，确定了基于长丝的RRAM在全电阻范围内的基本变异性极限。

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Fundamental variability limits of filament-based RRAM

While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are presented allowing the quantification of the intrinsic variability factors. As a result, the fundamental variability limits of filament-based RRAM in the full resistance range are identified.

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2016 IEEE International Electron Devices Meeting (IEDM)

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