基于中心电位的TM-CGAA MOSFET阈值电压建模

2016 International Conference on Microelectronics, Computing and Communications (MicroCom) Pub Date : 2016-07-28 DOI:10.1109/MICROCOM.2016.7522548

Jagamohan Sahoo, R. Mahapatra

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引用次数: 1

摘要

由于MOSFET的缩放问题，本文考虑采用三层材料圆柱栅极(TM-CGAA)来研究ses和DIBL。分析阈值电压模型也已报道。采用中心电势代替表面电势进行建模，精度更高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Center potential based threshold voltage modelling of TM-CGAA MOSFET

Due to scaling of MOSFET, in this paper we have considered a triple material cylindrical gate all around(TM-CGAA) to study the SCEs and DIBL. An analytical threshold voltage model has also been reported. Center potential based modeling is carried out instead of surface potential for better accuracy.

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2016 International Conference on Microelectronics, Computing and Communications (MicroCom)

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