{"title":"一种提高极低相位噪声SAW振荡器负载Q值的新方法","authors":"T. Imaike, Y. Sakuta, Y. Sekine","doi":"10.1109/FREQ.2008.4622983","DOIUrl":null,"url":null,"abstract":"We have previously proposed a circuit configuration of SAW oscillator for extremely low phase noise, the name of which is Fr oscillator. The Fr oscillator has been able to realize extremely low phase noise floor level in calculation; however, the loaded Q is lower than Colpitts type oscillator. Then we propose new method to increase loaded Q. Using this method, we show several characteristics of the loaded Q. Based on the results, we estimate SSB phase noise of the Fr oscillator. As a result, the phase noise level is improved about 15 dB in the neighborhood of carrier frequency if the input/output impedance of the frequency selective circuit is reduced. Furthermore, we make a couple of Fr oscillators using crystal resonator. The measured phase noise characteristics are corresponding to the calculated value well. It is clear that this method is effective for improving phase noise of near the carrier frequency.","PeriodicalId":220442,"journal":{"name":"2008 IEEE International Frequency Control Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new method to increase loaded Q of extremely low phase noise SAW oscillator\",\"authors\":\"T. Imaike, Y. Sakuta, Y. Sekine\",\"doi\":\"10.1109/FREQ.2008.4622983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have previously proposed a circuit configuration of SAW oscillator for extremely low phase noise, the name of which is Fr oscillator. The Fr oscillator has been able to realize extremely low phase noise floor level in calculation; however, the loaded Q is lower than Colpitts type oscillator. Then we propose new method to increase loaded Q. Using this method, we show several characteristics of the loaded Q. Based on the results, we estimate SSB phase noise of the Fr oscillator. As a result, the phase noise level is improved about 15 dB in the neighborhood of carrier frequency if the input/output impedance of the frequency selective circuit is reduced. Furthermore, we make a couple of Fr oscillators using crystal resonator. The measured phase noise characteristics are corresponding to the calculated value well. It is clear that this method is effective for improving phase noise of near the carrier frequency.\",\"PeriodicalId\":220442,\"journal\":{\"name\":\"2008 IEEE International Frequency Control Symposium\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-05-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Frequency Control Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2008.4622983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2008.4622983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new method to increase loaded Q of extremely low phase noise SAW oscillator
We have previously proposed a circuit configuration of SAW oscillator for extremely low phase noise, the name of which is Fr oscillator. The Fr oscillator has been able to realize extremely low phase noise floor level in calculation; however, the loaded Q is lower than Colpitts type oscillator. Then we propose new method to increase loaded Q. Using this method, we show several characteristics of the loaded Q. Based on the results, we estimate SSB phase noise of the Fr oscillator. As a result, the phase noise level is improved about 15 dB in the neighborhood of carrier frequency if the input/output impedance of the frequency selective circuit is reduced. Furthermore, we make a couple of Fr oscillators using crystal resonator. The measured phase noise characteristics are corresponding to the calculated value well. It is clear that this method is effective for improving phase noise of near the carrier frequency.