电学方法测量双片IGBT模块结温不均匀性

2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME) Pub Date : 2020-05-01 DOI:10.1109/ICEDME50972.2020.00032

Sijin Wang, Chunsheng Guo, Boyang Liu, Lei Wei, Shiwei Zhang

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引用次数: 1

摘要

测量IGBT模块结温不均匀性的电学方法一直是微电子领域的一个科学研究问题。本文提出了一种新的测量结温不均匀性的电方法，它不同于传统的使用单一测试条件的电方法。本文测量的集电极电流分别为高、低栅极电压。基于温度校准曲线和IGBT芯片并行模型，成功分析了双芯片IGBT模块的结温不均匀性，并分别得到了两芯片的结温。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Measuring Junction Temperature Inhomogeneity of Double-chip IGBT Modules by Electrical Method

The electrical method for measuring junction temperature inhomogeneity of IGBT modules has always been a scientific research problem in the field of microelectronics. This paper proposes a new type of electrical method for measuring junction temperature inhomogeneity, which is different from the conventional electrical methods using a single test condition. The collector currents measured in this paper are at high and low gate voltage, respectively. Based on the temperature calibration curve and the IGBT chips parallel model, the junction temperature inhomogeneity of the double-chip IGBT modules was analyzed successfully, and the junction temperature of the two chips were obtained respectively.

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2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME)

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