{"title":"霍尼韦尔的辐射硬化存储器开发","authors":"H. Kaakani","doi":"10.1109/AERO.2001.931186","DOIUrl":null,"url":null,"abstract":"Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper covers plans and results of our SOI technology development programs for SRAM products and giant magneto resistive (GMR) non-volatile memory.","PeriodicalId":329225,"journal":{"name":"2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Radiation hardened memory development at Honeywell\",\"authors\":\"H. Kaakani\",\"doi\":\"10.1109/AERO.2001.931186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper covers plans and results of our SOI technology development programs for SRAM products and giant magneto resistive (GMR) non-volatile memory.\",\"PeriodicalId\":329225,\"journal\":{\"name\":\"2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-03-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AERO.2001.931186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE Aerospace Conference Proceedings (Cat. No.01TH8542)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AERO.2001.931186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Radiation hardened memory development at Honeywell
Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper covers plans and results of our SOI technology development programs for SRAM products and giant magneto resistive (GMR) non-volatile memory.