霍尼韦尔的辐射硬化存储器开发

H. Kaakani
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引用次数: 10

摘要

霍尼韦尔深亚微米绝缘体上硅(SOI)技术的进步使新一代辐射硬存储器产品成为可能。本文涵盖了我们的SRAM产品和巨磁阻(GMR)非易失性存储器的SOI技术开发计划和结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation hardened memory development at Honeywell
Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper covers plans and results of our SOI technology development programs for SRAM products and giant magneto resistive (GMR) non-volatile memory.
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