Cu/Sn/Ni微碰撞固相时效中高Ni含量(Cu, Ni)6Sn5的形成机理

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9962977

Haiyang Yu, C. Kao

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引用次数: 0

摘要

Cu/Sn/Ni微凸点由于成本低，是电子封装中应用最广泛的结构。近年来的研究对该体系的微观结构演变和相形成进行了表征，发现了一种独特的(Cu,Ni)6Sn5相，具有较高的Ni含量。然而，对于这一相的形成机制一直存在争议。本研究建立了(Cu,Ni)6Sn5的形成机理模型，并提供了直接证据。

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Formation Mechanism of high Ni content (Cu, Ni)6Sn5 in Cu/Sn/Ni microbump for solid state aging

Due to its low cost, the Cu/Sn/Ni microbump is the most widely used structure in electronic packaging. Recent studies have characterized the evolution of the microstructure and phase formation in this system, and a unique (Cu,Ni)6Sn5 phase has been discovered with a high Ni content. However, there has been debate over the formation mechanism of this phase. This study builds a model of the formation mechanism of (Cu,Ni)6Sn5 and provides direct proof.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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