23-40 GHz InP HEMT MMIC分布式混频器

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.186035

R. Majidi-Ahy, C. Nishimoto, J. Russell, W. Ou, S. Bandy, G. Zdasiuk

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引用次数: 9

摘要

作者报告了一种有源毫米波InP高电子迁移率晶体管(HEMT)单片微波集成电路(MMIC)分布式混频器的开发，工作在23-40 GHz RF带宽上，中频范围为2-13 GHz，固定本振(LO)频率为20和28 GHz。器件为InGaAs-InAlAs-InP hemt，栅极长度为0.25 μ m。混频器在最大带宽偏置时的平均转换增益为0 dB，在最大增益偏置时的平均转换增益为5 dB。该MMIC的整体芯片尺寸为500*1000 μ m。

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23-40 GHz InP HEMT MMIC distributed mixer

The authors report the development of an active millimeter-wave InP high electron mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) distributed mixer operating over the 23-40-GHz RF bandwidth, with IF frequencies in the range of 2-13 GHz and fixed local oscillator (LO) frequencies of 20 and 28 GHz. The devices were InGaAs-InAlAs-InP HEMTs with a gate length of 0.25 mu m. The mixer had an average conversion gain of 0 dB when biased for maximum bandwidth, and an average conversion gain of 5 dB when biased for maximum gain. The overall chip dimensions for this MMIC were 500*1000 mu m.<>

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IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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