{"title":"基于超紧凑MOS模型的逆变器传递曲线和SRAM噪声裕度评估","authors":"Elio Consoli, G. Giustolisi, G. Palumbo","doi":"10.1109/ECCTD.2011.6043401","DOIUrl":null,"url":null,"abstract":"In this paper, an ultra-compact I–V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":"677 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inverter transfer curves and SRAM noise margin evaluation based on an ultra-compact MOS model\",\"authors\":\"Elio Consoli, G. Giustolisi, G. Palumbo\",\"doi\":\"10.1109/ECCTD.2011.6043401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, an ultra-compact I–V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins.\",\"PeriodicalId\":126960,\"journal\":{\"name\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":\"677 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2011.6043401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inverter transfer curves and SRAM noise margin evaluation based on an ultra-compact MOS model
In this paper, an ultra-compact I–V nanometer MOS model, suitable for the analysis of digital circuits, is first proposed. All the main physical effects are included through nine parameters and the model is shown to allow an accurate and quick estimation of DC transfer curves or SRAM noise margins.