具有可调和可控间隙的硅纳米镊子用于DNA分子的操作和表征

2006 International Conference on Microtechnologies in Medicine and Biology Pub Date : 2006-05-09 DOI:10.1109/MMB.2006.251507

C. Yamahata, T. Takekawa, K. Ayano, M. Hosogi, M. Kumemura, B. Legrand, D. Collard, G. Hashiguchi, H. Fujita

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引用次数: 13

摘要

我们描述了静电驱动的硅纳米镊子，用于DNA分子的操作和表征。该工艺结合了KOH刻蚀和深度反应离子刻蚀(DRIE)在硅绝缘体(SOI)晶圆上的制备，分别形成了尖锐的纳米尖端和高纵横比的微结构。微机电系统(MEMS)由一对相对的尖端组成，由于高分辨率差分电容传感器，其距离可以精确调节。该设备显示了5 nm的分辨率，位移范围为3 mum(静态模式)。它的谐振频率为2khz，在空气中质量因数为40，在真空中为550

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Silicon Nanotweezers with Adjustable and Controllable Gap for the Manipulation and Characterization of DNA Molecules

We describe electrostatically actuated silicon nanotweezers which are intended for the manipulation and characterization of DNA molecules. The fabrication process combines KOH etching and deep reactive ion etching (DRIE) on silicon-on-insulator (SOI) wafer to form sharp nanotips and high aspect ratio microstructures, respectively. The microelectromechanical system (MEMS) consists of a pair of opposing tips, the distance of which can be accurately adjusted thanks to a high resolution differential capacitive sensor. The device shows a resolution of 5 nm for a displacement range of 3 mum (static mode). It has a resonant frequency at 2 kHz and a quality factor of 40 in air, and 550 in vacuum

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2006 International Conference on Microtechnologies in Medicine and Biology

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