湿蚀刻复杂三维MEMS结构

P. Pal, Kazuo Sato
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引用次数: 2

摘要

本研究报告了形成复杂三维结构的制造技术。在纯表面活性剂Triton X−100 [C14H22O(c2h40o)n, n= 9-10]中添加25 wt%的四甲基氢氧化铵(TMAH)溶液,开发了非常经济的各向异性湿法蚀刻工艺。该结构是在绝缘体(SOI) Si{100}晶圆上的单晶硅和氮基硅上制造的。在单晶圆中,既可以制造固定结构,也可以制造悬浮结构,而在SOI晶圆中,只能实现独立式结构。本研究旨在扩大湿法蚀刻制造三维结构的范围。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wet etched complex three dimensional MEMS structures
The present research reports the fabrication techniques for the formation of complex three dimensional structures. The process is developed using very economic wet anisotropic etching in pure and surfactant Triton X−100 [C14H22O(C2H4O)n, n= 9–10] added 25 wt% tetramethyl ammonium hydroxide (TMAH) solutions. The structures are fabricated in single and nitride-based silicon on insulator (SOI) Si{100} wafers. In single wafer, both fixed and suspended structures are manufactured, while in SOI wafers only freestanding structures are realized. The present research is aimed to enhance the range of 3D structures fabricated using wet etching.
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