s波段InAlN/GaN HEMTs功率器件的研制

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062455

S. Piotrowicz, E. Chartier, O. Jardel, J. Dufraisse, G. Callet, J. Jacquet, D. Lancereau, E. Morvan, R. Aubry, N. Sarazin, C. Dua, M. Oualli, M. A. Di-Forte Poisson, S. Delage

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引用次数: 5

摘要

本文报道了采用低压金属有机气相外延技术在SiC衬底上采用0.7 μ m栅长制备AlInN/GaN hemt。静态和脉冲直流特性表明，最大直流跨导为275mS/mm，漏极电流为0.9A/mm。小信号特性显示Ft和Fmag分别为15 GHz和40 GHz。负载-拉力功率测量在s波段进行。在3.5 GHz时，在脉冲模式下，在2mm器件上达到13W (41.2dBm)的输出功率，对应于6.6W/mm的功率密度，PAE为70%。19.2mm电源模块使我们能够在2 GHz时实现56W的输出功率和54%的PAE。据我们所知，这一结果代表了基于alin的HEMT技术所报道的最高输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of InAlN/GaN HEMTs Power Devices in S-Band

We report on AlInN/GaN HEMTs fabricated using 0.7µm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output power of 13W (41.2dBm) corresponding to 6.6W/mm of power density with a PAE of 70% is reached in pulse mode on 2mm devices. 19.2mm power dies allow us to achieve an output power of 56W with 54% of PAE at 2 GHz. To our knowledge, this result represents the highest output power ever reported for AlInN-based HEMT technology.

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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