一种用于移动通信系统的具有高击穿电压的自对准埋道异质结构GaAs场效应管

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567879

Y. Kitaura, K. Nishihori, Y. Tanabe, M. Mihara, M. Yoshimura, T. Nitta, Y. Kakiuchi, N. Uchitomi

{"title":"一种用于移动通信系统的具有高击穿电压的自对准埋道异质结构GaAs场效应管","authors":"Y. Kitaura, K. Nishihori, Y. Tanabe, M. Mihara, M. Yoshimura, T. Nitta, Y. Kakiuchi, N. Uchitomi","doi":"10.1109/GAAS.1996.567879","DOIUrl":null,"url":null,"abstract":"The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems\",\"authors\":\"Y. Kitaura, K. Nishihori, Y. Tanabe, M. Mihara, M. Yoshimura, T. Nitta, Y. Kakiuchi, N. Uchitomi\",\"doi\":\"10.1109/GAAS.1996.567879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用外延和离子注入相结合的方法制备了埋沟道WNx/W自对准异质结构GaAs场效应管。该场效应管包括离子注入通道和未掺杂的AlGaAs外延表面层。离子注入技术导致了ic取向工艺，外延技术导致了埋藏沟道结构。实现了易于隔离和提高击穿电压，有望用于l波段数字移动通信系统的mmic。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A self-aligned buried-channel heterostructure GaAs FET with high breakdown voltage for use in mobile communications systems

The combined process of epitaxy and ion implantation has been developed in the fabrication of a buried-channel WNx/W self-aligned heterostructure GaAs FET. This FET comprises an ion implanted channel and an undoped AlGaAs epitaxial surface layer. The ion-implantation technique leads to an IC-oriented process and the epitaxial technique to a buried channel structure. Both ease of isolation and enhanced breakdown voltage were attained, promising MMICs for L-band digital mobile communication systems.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

自引率

0.00%

发文量