大功率x波段砷化镓场效应晶体管

1979 9th European Microwave Conference Pub Date : 1979-10-01 DOI:10.1109/EUMA.1979.332711

B. Hewitt, R. C. Ellis, Richard P. Thomas, R. Healy, M. Benedek

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引用次数: 1

摘要

介绍高功率x波段砷化镓场效应晶体管的设计注意事项和处理技术。重点将放在与普通引线电感、栅极漏极击穿电压和热阻相关的问题上。大外围设计(最大10毫米)的微波性能将被报道。将强调具有整体镀热沉的过孔源连接器件的优越性能。

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High Power X-Band GaAs Field Effect Transistors

Design considerations and processing techniques related to high power X-band GaAs field effect transistors will be presented. Particular emphasis will be placed on the problems associated with common lead inductance, gate-drain breakdown voltage and thermal resistance. The microwave performance of large periphery designs (up to 10 mms) will be reported. The superior performance of via-hole source connected devices with integral plated heat sinks will be stressed.

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1979 9th European Microwave Conference

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