{"title":"功率GaAs场效应管的可靠性研究","authors":"I. Drukier, J. Silcox","doi":"10.1109/EUMA.1979.332713","DOIUrl":null,"url":null,"abstract":"Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At an operating temperature of 125°C a MTTF of 4 × 106 hours is predicted. The activation energy of this process is 1.8eV. Failures are related to the gate.","PeriodicalId":128931,"journal":{"name":"1979 9th European Microwave Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1979-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A Reliability Study of Power GaAs FETs\",\"authors\":\"I. Drukier, J. Silcox\",\"doi\":\"10.1109/EUMA.1979.332713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At an operating temperature of 125°C a MTTF of 4 × 106 hours is predicted. The activation energy of this process is 1.8eV. Failures are related to the gate.\",\"PeriodicalId\":128931,\"journal\":{\"name\":\"1979 9th European Microwave Conference\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1979-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1979 9th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1979.332713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1979 9th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1979.332713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At an operating temperature of 125°C a MTTF of 4 × 106 hours is predicted. The activation energy of this process is 1.8eV. Failures are related to the gate.
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