Admittance analysis of thermally evaporated-hole selective MoO3 on crystalline silicon

Integration of stoichiometric molybdenum trioxide (MoO3−x) as an effective hole transport layer (HTL) in solar cells is expected to reduce fabrication cost by eliminating the high temperature processes while maintaining high conversion efficiency. In this work we performed a systematic study to extract the electronic properties of vapor-phase deposited MoO3−x thin film and MoO3−x/crystalline silicon interface through capacitance and conductance analysis. Effect of MoO3−x thickness as well as post deposition annealing on series resistance, electrical response, interface and bulk trapped oxide charges were profoundly examined and determined. Moreover, variation in series resistance, behavior of the interface and bulk trapped charges were revealed. Finally, frequency and bias voltage dependence of the series resistance and interface trapped charge were determined