{"title":"ZnO和gan基宽间隙半导体纳米结构中捕获、弛豫和复合的微观动力学:纳米空间分辨和ps时间分辨阴极发光光谱","authors":"J. Christen","doi":"10.1109/INOW.2008.4634433","DOIUrl":null,"url":null,"abstract":"The unique potential of cathodoluminescence microscopy combining high spectral (deltalambda < 0.02 nm), spatial (delta x < 45 nm), and time (deltat < 35 ps) resolution enables direct access to the nano-scale properties of semiconductors.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Microscopic kinetics of capture, relaxation and recombination in ZnO- and GaN-based wide gap semiconductor nano-structures: nm-Spatially- and ps-time-resolved cathodoluminescence spectroscopy\",\"authors\":\"J. Christen\",\"doi\":\"10.1109/INOW.2008.4634433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The unique potential of cathodoluminescence microscopy combining high spectral (deltalambda < 0.02 nm), spatial (delta x < 45 nm), and time (deltat < 35 ps) resolution enables direct access to the nano-scale properties of semiconductors.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microscopic kinetics of capture, relaxation and recombination in ZnO- and GaN-based wide gap semiconductor nano-structures: nm-Spatially- and ps-time-resolved cathodoluminescence spectroscopy
The unique potential of cathodoluminescence microscopy combining high spectral (deltalambda < 0.02 nm), spatial (delta x < 45 nm), and time (deltat < 35 ps) resolution enables direct access to the nano-scale properties of semiconductors.
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