{"title":"氮化镓基平面纳米器件的太赫兹振荡研究","authors":"K. Xu, A. Song, Z. Chen, Z. Zheng, G. Wang","doi":"10.1109/SOPO.2010.5504333","DOIUrl":null,"url":null,"abstract":"The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.","PeriodicalId":155352,"journal":{"name":"2010 Symposium on Photonics and Optoelectronics","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Study of THz Oscillations in GaN-Based Planar Nanodevices\",\"authors\":\"K. Xu, A. Song, Z. Chen, Z. Zheng, G. Wang\",\"doi\":\"10.1109/SOPO.2010.5504333\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.\",\"PeriodicalId\":155352,\"journal\":{\"name\":\"2010 Symposium on Photonics and Optoelectronics\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Symposium on Photonics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOPO.2010.5504333\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Symposium on Photonics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOPO.2010.5504333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of THz Oscillations in GaN-Based Planar Nanodevices
The feasibility of THz oscillations in a GaN-based planar nanoscale unipolar diode, or a self-switching device (SSD), is analyzed using Monte Carlo simulations. The origin of THz oscillations is contributed to Gunn-effect. The dependence of the Gunn oscillations on geometric parameters and bias conditions has been studied. By using proper parameters, the oscillation frequency can reach 0.6 THz. Moreover, potential applications are discussed in terms of the ease of heat dissipation and generation of oscillations at different frequencies on a single chip, in contrast to a conventional vertical-structure Gunn diode.
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