先进的RFC二极管，采用新颖的垂直结构，具有土壤性和高动态坚固性

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988940

Katsumi Nakamura, K. Shimizu

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引用次数: 6

摘要

本文首次报道了采用放松阴极场技术的自由旋转二极管(FWD)通过采用一种新颖的垂直结构获得了优异的综合性能。提出的垂直结构由“光穿透(LPT) II”和“控制载流子等离子体层(CPL)”组成。对1200v二极管的测量结果表明，该垂直概念大大改善了二极管的总损耗和动态特性，如恢复柔软度和动态坚固度。这些改进是在回收过程中控制载流子等离子体层和调节CPL区的电场梯度的结果。先进的RFC二极管明显突破了FWD的总损耗、恢复柔软度和恢复SOA的权衡三角。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advanced RFC diode utilizing a novel vertical structure for soilness and high dynamic ruggedness

This paper reports for the first time that the freewheeling diode (FWD) with Relaxed Field of Cathode (RFC) technology can achieves excellent total performance by adopting a novel vertical structure. The proposed vertical structure consists of a “Light Punch-Through (LPT) II” and a “Controlling Carrier-Plasma Layer (CPL)”. The measured results of 1200 V diode show that the total loss and dynamic behavior such as the recovery softness and the dynamic ruggedness are greatly improved thanks to the proposed vertical concept. These improvements are the result of controlling the charge-carrier plasma layer and moderating the electric field gradient in CPL zone during the recovery operation. The advanced RFC diode clearly breaks through the trade-off triangle of the total loss, the recovery softness and the recovery SOA of the FWD.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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