{"title":"薄氧化物MOS器件中漏极雪崩诱导的空穴注入和界面陷阱的产生","authors":"R. Rakkhit, S. Haddad, C. Chang, J. Yue","doi":"10.1109/RELPHY.1990.66078","DOIUrl":null,"url":null,"abstract":"Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<<ETX>>","PeriodicalId":409540,"journal":{"name":"28th Annual Proceedings on Reliability Physics Symposium","volume":"45 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices\",\"authors\":\"R. Rakkhit, S. Haddad, C. Chang, J. Yue\",\"doi\":\"10.1109/RELPHY.1990.66078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<<ETX>>\",\"PeriodicalId\":409540,\"journal\":{\"name\":\"28th Annual Proceedings on Reliability Physics Symposium\",\"volume\":\"45 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"28th Annual Proceedings on Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1990.66078\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"28th Annual Proceedings on Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1990.66078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Drain-avalanche induced hole injection and generation of interface traps in thin oxide MOS devices
Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability of a flash memory cell and can cause early window closure.<>
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