{"title":"ACAs倒装芯片接头的大电流失效","authors":"W. Kwon, K. Paik","doi":"10.1109/ECTC.2002.1008245","DOIUrl":null,"url":null,"abstract":"In this paper the maximum current carrying capability of ACAs flip chip joint is investigated based on two failure mechanisms: (1) degradation of the interface between gold stud bumps and aluminum pads; and (2) ACA swelling between chips and substrates under high current stress. For the determination of the maximum allowable current, bias stressing was applied to ACAs flip chip joint. The current level at which current carrying capability is saturated is defined as the maximum allowable current. The degradation mechanism under high current stress was studied by in-situ monitoring of gold stud bump-aluminum pad ACA contact resistance and also ACA junction temperature at various current level. The cumulative failure distributions were used to predict the lifetime of ACAs flip chip joint under high current stressing. These experimental results can be used to better understand and to improve the current carrying capability of ACA flip chip joint.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"High current induced failure of ACAs flip chip joint\",\"authors\":\"W. Kwon, K. Paik\",\"doi\":\"10.1109/ECTC.2002.1008245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the maximum current carrying capability of ACAs flip chip joint is investigated based on two failure mechanisms: (1) degradation of the interface between gold stud bumps and aluminum pads; and (2) ACA swelling between chips and substrates under high current stress. For the determination of the maximum allowable current, bias stressing was applied to ACAs flip chip joint. The current level at which current carrying capability is saturated is defined as the maximum allowable current. The degradation mechanism under high current stress was studied by in-situ monitoring of gold stud bump-aluminum pad ACA contact resistance and also ACA junction temperature at various current level. The cumulative failure distributions were used to predict the lifetime of ACAs flip chip joint under high current stressing. These experimental results can be used to better understand and to improve the current carrying capability of ACA flip chip joint.\",\"PeriodicalId\":285713,\"journal\":{\"name\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2002.1008245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2002.1008245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High current induced failure of ACAs flip chip joint
In this paper the maximum current carrying capability of ACAs flip chip joint is investigated based on two failure mechanisms: (1) degradation of the interface between gold stud bumps and aluminum pads; and (2) ACA swelling between chips and substrates under high current stress. For the determination of the maximum allowable current, bias stressing was applied to ACAs flip chip joint. The current level at which current carrying capability is saturated is defined as the maximum allowable current. The degradation mechanism under high current stress was studied by in-situ monitoring of gold stud bump-aluminum pad ACA contact resistance and also ACA junction temperature at various current level. The cumulative failure distributions were used to predict the lifetime of ACAs flip chip joint under high current stressing. These experimental results can be used to better understand and to improve the current carrying capability of ACA flip chip joint.