基于通用gm/ID MOST模型,采用移位技术设计射频级联放大器

Kawther I. Arafa, I. Abdalla, M. Ibrahim, F. Farag
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引用次数: 1

摘要

本文介绍了一种设计鲁棒射频放大器的新方法。在这种方法中;尺寸(面积)和功率(直流电流偏置)可扩展,以匹配射频设计规范。采用了多种参数对设计结果进行优化。采用微调技术使频率放大非线性最小化。该方法首先基于低频角规范设计,以避免寄生效应,然后开始缩放过程。ACM MOST在模拟CMOS电路设计中非常有用。在该模型中,电流反转系数作为设计关键。一组最简单的表达式允许快速设计分析,以及根据功耗或硅实际状态的设计评估。该方法已通过MATLAB程序实现,证明了它的实用性和应用前景。一组RF CMOS级联码放大器的设计证明了所提出方法的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design RF cascode amplifier based on the universal gm/ID MOST model by using shifting technique
This paper introduces a new methodology for designing a robust Radio Frequency (RF) amplifier. In this method; the dimensions (area) and power (DC current bias) are scalable to match the RF design specifications. Many parameters are used to optimize the design results. The frequency scaling up nonlinearity is minimized with the trimming technique. The proposed method is firstly based on designing with low frequency corner specifications to avoid the parasitic effects, and then, the scaling process is starting. The ACM MOST is useful in analog CMOS circuit design. In this model, the current inversion coefficient is used as the design key. A set of simplest expressions allows quick design analytically as well as an evaluation of the design in terms of power consumption or silicon real state. The methodology has been implemented using MATLAB program and proved to be very practical and promising. A set of RF CMOS cascode amplifiers designs demonstrate the reliability of the proposed methodology.
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