横杆阵列结构中ReRAM的功耗研究

Wookyung Sun, H. Lim, Hyungsoon Shin, Wootae Lee
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引用次数: 5

摘要

采用综合交叉栅阵矩阵模型研究了大型交叉栅阵结构的功耗。研究了阵列尺寸、选择器漏电流和各种偏置方案对功耗的影响。随着阵列尺寸的增大和选择器漏电流的增大,功耗也随之增大。此外,1/3偏置方案的功耗比其他偏置方案大1~2个数量级。这种现象是由未选择的电池引起的,其电压约为Vdd/3,而对于1/2偏置和浮动偏置方案,未选择的电池电压几乎为0 V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of power dissipation for ReRAM in crossbar array architecture
Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1~2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about Vdd/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes.
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