基于高性能电荷等离子体的多区横向双极结晶体管

S. Loan, F. Bashir, M. Rafat, S. A. Abbasi, A. Alamoud
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引用次数: 0

摘要

本文提出了一种利用多区集电极漂移区在绝缘体硅(SOI)上的横向双极结晶体管(LBJT)结构。该器件的新颖之处在于利用电荷等离子体的概念来实现发射极、基极和多区集电极漂移区。本文采用不同功函数的金属代替传统的扩散和离子注入的掺杂方法来实现这些区域。本文对所提出的多区电荷等离子体LBJT (MZCP-LBJT)在SOI上进行了数值模拟,并与常规掺杂LBJT (CD-LBJT)在SOI上的关键特性进行了比较。该器件在导通电流(ION)、电流增益、截止频率(fT)和击穿电压方面均有显著改善。结果表明,该器件的电流增益提高了20倍,离子增益提高了10倍。此外,通过在集电极和基极区域之间使用优化的间隙,在所提出的器件中实现了34%的fT增加。此外,该器件采用电荷等离子体概念实现不同区域,而不是传统的掺杂方法,不存在掺杂相关问题,也不需要高温处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High performance charge plasma based multi zone lateral bipolar junction transistor
In this paper, we propose a new structure of a lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI), employing multi zone collector drift region. The novelty of the device is the use of charge plasma concept to realize emitter, base and multi zone collector drift regions. Here metals of different work functions are used to realize these regions instead of conventional doping methods of diffusion and ion implantation. The numerical simulation of the proposed multi zone charge plasma LBJT (MZCP-LBJT) on SOI has been performed and the key characteristics have been compared with the conventionally doped LBJT (CD-LBJT) on SOI. A significant improvement in the ON current (ION), current gain, cutoff frequency (fT) and breakdown voltage has been observed in the proposed device. It has been observed that current gain increases by ~ 20 times and ION by 10 times in the proposed device. Further, by using an optimized gap between the collector and base regions, a 34% increase in fT is achieved in the proposed device. Furthermore, the proposed device does not face doping related issues and the requirement of high temperature processing is absent, as it uses charge plasma concept to realize different regions, instead of the conventional doping methods.
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