{"title":"非理想的连续e类PA模式的最大效率和最大线性","authors":"J. V. de Almeida, K. Wu","doi":"10.1109/IWS49314.2020.9359976","DOIUrl":null,"url":null,"abstract":"This paper presents the analysis of a class-E PA using an equivalent circuit model based on a look-up table generated by numerical simulation. The proposed methodology allows the direct determination of the drain voltage and current waveforms considering the transistor's triode region, finite switching time, and short-channel and thermal effects on saturation current. The revealed non-ideal space of high-efficient solutions is used to determine the class-E modes for maximum efficiency and maximum linearity. To support the theoretical results, a particular topology is implemented using a 25W-GaN transistor. The experimental results of the manufactured class-E are presented. Over a bandwidth of 2.37-2.41 GHz, the demonstrator has presented efficiency better than 75% with constant 42 dBm of continuous wave power.","PeriodicalId":301959,"journal":{"name":"2020 IEEE MTT-S International Wireless Symposium (IWS)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-ideal Continuous Class-E PA Modes for Maximum Efficiency and Maximum Linearity\",\"authors\":\"J. V. de Almeida, K. Wu\",\"doi\":\"10.1109/IWS49314.2020.9359976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the analysis of a class-E PA using an equivalent circuit model based on a look-up table generated by numerical simulation. The proposed methodology allows the direct determination of the drain voltage and current waveforms considering the transistor's triode region, finite switching time, and short-channel and thermal effects on saturation current. The revealed non-ideal space of high-efficient solutions is used to determine the class-E modes for maximum efficiency and maximum linearity. To support the theoretical results, a particular topology is implemented using a 25W-GaN transistor. The experimental results of the manufactured class-E are presented. Over a bandwidth of 2.37-2.41 GHz, the demonstrator has presented efficiency better than 75% with constant 42 dBm of continuous wave power.\",\"PeriodicalId\":301959,\"journal\":{\"name\":\"2020 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWS49314.2020.9359976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWS49314.2020.9359976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-ideal Continuous Class-E PA Modes for Maximum Efficiency and Maximum Linearity
This paper presents the analysis of a class-E PA using an equivalent circuit model based on a look-up table generated by numerical simulation. The proposed methodology allows the direct determination of the drain voltage and current waveforms considering the transistor's triode region, finite switching time, and short-channel and thermal effects on saturation current. The revealed non-ideal space of high-efficient solutions is used to determine the class-E modes for maximum efficiency and maximum linearity. To support the theoretical results, a particular topology is implemented using a 25W-GaN transistor. The experimental results of the manufactured class-E are presented. Over a bandwidth of 2.37-2.41 GHz, the demonstrator has presented efficiency better than 75% with constant 42 dBm of continuous wave power.