On-state resistance degradation of power RF N-LDMOS devices due to defects created at interface

The papier study the temperature effects on I-V characteristics of N-channel power RF LDMOS devices, and especially of RDS-on resistance; which is a main constraint of LDMOS devices in high temperature operations, that can partially or total change the performances of physical and electrical device. RDS-on has strong temperature dependence. The main parameters electrical relevant to the temperature effects of the device behavior is reported and proven by the basic physical behavior. The analysis of the experimental results is presented and the physical simulations (2D ATLAS-SILVACO) are used to explain and observe the preview of temperature impacts on power RF LDMOS performance. The physical parameters like current lines, concentration, electric field and mobility are taken into consideration follows temperature dependence. Finally, initial impacts analysis is discussed.