用于Q/ v波段卫星通信的40nm CMOS Q波段低噪声放大器

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9963129

Qin Tian, Dixian Zhao

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引用次数: 0

摘要

本文提出了一种采用两级级联编码拓扑和感应源退化技术的40纳米CMOS技术制作的q波段单端LNA。该LNA的最低NF为4.3 dB，最大功率增益为24.2 dB, 3db带宽为11 GHz，从1.5 V电源消耗17.85 mW直流功率。

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A Q-Band Low-Noise Amplifier in 40-nm CMOS for Q/V-band satellite communications

This paper proposes a Q-band single-ended LNA fabricated in 40-nm CMOS technology, where two-stage cascode topology and inductive source degeneration technique are employed. The proposed LNA has achieved a lowest NF of 4.3 dB, and a maximum power gain of 24.2 dB with a 3-dB bandwidth of 11 GHz, consuming 17.85 mW dc power from a 1.5 V supply.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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