利用量子介电理论和价带抗交叉模型计算了GaP1−xBix的能带特性

International Conference on Electronics, Communication and Instrumentation (ICECI) Pub Date : 2014-03-17 DOI:10.1109/ICECI.2014.6767363

D. P. Samajdar, S. Dhar

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摘要

基于量子介电理论(QDT)和价带抗交叉(VBAC)相互作用的数学模型解释了GaP1-xBix带隙的组分依赖性。利用QDT理论预测的GaBi带隙，计算了三元合金的能带结构。

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Energy band gap characteristics of GaP1−xBix calculated using Quantum Dielectric Theory and Valence Band Anticrossing model

Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.

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International Conference on Electronics, Communication and Instrumentation (ICECI)

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