Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal
{"title":"用于电子战的6-18 GHz GaN on SiC高功率放大器MMIC","authors":"Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal","doi":"10.23919/EUMIC.2018.8539895","DOIUrl":null,"url":null,"abstract":"A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $\\mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare\",\"authors\":\"Eduardo Oreia-Gigorro, Emilio Delgado Pascual, Juan José Sánchez-Martínez, María Luz Gil-Heras, Virginia Bueno-Fernández, Antonio Bódalo-Márquez, J. Grajal\",\"doi\":\"10.23919/EUMIC.2018.8539895\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $\\\\mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"164 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539895\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
摘要
提出了一种基于GaN on SiC技术的6 - 18ghz高功率放大器的设计方案。该功率放大器由两级联合放大器组成。它是在Indra Sistemas设计的，并在一家欧洲铸造厂使用0.25美元的工艺制造的。该HPA的平均输出功率为39.2 dBm，饱和时的平均增益为11 dB，脉冲模式工作时的最大功率增加效率为24.5%。
A 6–18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare
A 6–18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 $\mu$ m process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.
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