定向自组装材料的高分辨率超过PS-b-PMMA

Eri Hirahara, M. Paunescu, O. Polishchuk, E. Jeong, Edward Ng, J. Shan, Jian Yin, Jihoon Kim, Yi Cao, Jin Li, Sungeun Hong, D. Baskaran, Guanyang Lin
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引用次数: 4

摘要

为了扩展聚苯乙烯-b-甲基丙烯酸甲酯(PS-b-PMMA)的定向自组装(DSA),以获得更高的分辨率,放置精度和潜在的改进的模式线边缘粗糙度(LER),我们开发了下一代有机高χ嵌段共聚物(“HC系列”,AZEMBLYTM EXP PME-3000系列)的材料平台。新材料平台具有内置的方向控制机制,使嵌段共聚物域能够垂直自适应,无需面漆/添加剂或精细的溶剂蒸气退火。此外,通过两种主要的化学外延DSA, LiNe和SMARTTM工艺,在12英寸晶圆衬底上成功地实现了低于10纳米的线和空间(L/S)图像化。结果表明,新材料平台与现有的基于ps -b- pmma的化学预模和标准方案兼容。我们还在传统的PS-b-PMMA系统中引入了内置的定向控制策略,生产了易于定向控制的新一代PS-b-PMMA材料。改良的PS-b-PMMA (m-PS-b-PMMA)进行LiNe flow DSA,在L/S模式转移到Si衬底后,产生可比的CD工艺窗口,改善了LER/LWR/SWR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Directed self-assembly materials for high resolution beyond PS-b-PMMA
To extend directed self-assembly (DSA) of poly(styrene-b-methyl methacrylate) (PS-b-PMMA) for higher resolution, placement accuracy and potentially improved pattern line edge roughness (LER), we have developed a next-generation material platform of organic high-χ block copolymers (“HC series”, AZEMBLYTM EXP PME-3000 series). The new material platform has a built-in orientation control mechanism which enables block copolymer domains to vertically selforient without topcoat/additive or delicate solvent vapor annealing. Furthermore, sub-10 nm lines and spaces (L/S) patterning by two major chemoepitaxy DSA, LiNe and SMARTTM processes, was successfully implemented on 12” wafer substrates by using the PME-3000 lamellar series. The results revealed that the new material platform is compatible with the existing PS-b-PMMA-based chemical prepatterns and standard protocols. We also introduced the built-in orientation control strategy to the conventional PS-b-PMMA system, producing a new generation of PS-b-PMMA materials with facile orientation control. The modified PS-b-PMMA (m-PS-b-PMMA) performed LiNe flow DSA yielding a comparable CD process window with improved LER/LWR/SWR after the L/S patterns were transferred into a Si substrate.
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