用于9波段MB-OFDM UWB系统的1.5 v CMOS接收器前端

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.321000

S. Lou, Hui Zheng, H. Luong

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引用次数: 19

摘要

本文提出了一种用于多频段OFDM (MB-OFDM)系统的双转换零中频结构的CMOS接收机前端(RFE)设计，覆盖3.1 GHz至8.0 GHz的前9个频带，每个频带带宽为528mhz。提出了一种3级宽带变增益LNA和一种新型底LO输入混频器。包括一个完全集成的频率合成器，以产生所需的LO信号，其频带切换时间小于Ins。RFE采用台积电0.18 mA CMOS工艺制造，工作电压为1.5 V，最大噪声系数为8.1 dB，带内IIP3为-11.1 dBm，总电流为81.5 mA

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A 1.5-V CMOS Receiver Front-End for 9-Band MB-OFDM UWB System

This paper presents the design of a CMOS receiver front-end (RFE) with dual-conversion zero-IF architecture for multi-band OFDM (MB-OFDM) system covering the first 9 frequency bands from 3.1 GHz to 8.0 GHz, each with a bandwidth of 528 MHz. A 3-stage wideband variable-gain LNA and a novel mixer with bottom LO input devices are proposed. A fully integrated frequency synthesizer is included to generate the desired LO signals with a band switching time of less than Ins. Fabricated in TSMC 0.18mum CMOS process and operated at 1.5 V, the RFE measures a maximum noise figure of 8.1 dB and an in-band IIP3 of -11.1 dBm while consuming a total current of 81.5 mA

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IEEE Custom Integrated Circuits Conference 2006

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