Yuan Xie, Sheng-Shian Li, Yu-Wei Lin, Z. Ren, C. Nguyen
{"title":"超高频微机械伸长酒杯模环谐振器","authors":"Yuan Xie, Sheng-Shian Li, Yu-Wei Lin, Z. Ren, C. Nguyen","doi":"10.1109/IEDM.2003.1269436","DOIUrl":null,"url":null,"abstract":"Vibrating polysilicon micromechanical ring resonators, utilizing a unique extensional wine-glass mode shape to achieve lower impedance than previous UHF resonators, have been demonstrated at frequencies as high as 1.2-GHz with a Q of 3,700, and 1.47-GHz (highest to date) with a Q of 2,300. The 1.2-GHz resonator exhibits a measured motional resistance of 560 k/spl Omega/ with a dc-bias voltage of 20 V, which is 6/spl times/ lower than measured on radial contour mode disk counterparts at the same frequency, and which can be driven down as low as 2 k/spl Omega/ when a dc-bias voltage of 100 V and electrode-to-resonator gap spacing of 460 /spl Aring/ are used. The above high Q and low impedance advantages, together with the multiple frequency, on-chip integration advantages afforded by electrostatically-transduced /spl mu/mechanical resonators, make this device an attractive candidate for use in the front-end RF filtering and oscillator functions needed by wireless communication devices.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"76","resultStr":"{\"title\":\"UHF micromechanical extensional wine-glass mode ring resonators\",\"authors\":\"Yuan Xie, Sheng-Shian Li, Yu-Wei Lin, Z. Ren, C. Nguyen\",\"doi\":\"10.1109/IEDM.2003.1269436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vibrating polysilicon micromechanical ring resonators, utilizing a unique extensional wine-glass mode shape to achieve lower impedance than previous UHF resonators, have been demonstrated at frequencies as high as 1.2-GHz with a Q of 3,700, and 1.47-GHz (highest to date) with a Q of 2,300. The 1.2-GHz resonator exhibits a measured motional resistance of 560 k/spl Omega/ with a dc-bias voltage of 20 V, which is 6/spl times/ lower than measured on radial contour mode disk counterparts at the same frequency, and which can be driven down as low as 2 k/spl Omega/ when a dc-bias voltage of 100 V and electrode-to-resonator gap spacing of 460 /spl Aring/ are used. The above high Q and low impedance advantages, together with the multiple frequency, on-chip integration advantages afforded by electrostatically-transduced /spl mu/mechanical resonators, make this device an attractive candidate for use in the front-end RF filtering and oscillator functions needed by wireless communication devices.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"76\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
UHF micromechanical extensional wine-glass mode ring resonators
Vibrating polysilicon micromechanical ring resonators, utilizing a unique extensional wine-glass mode shape to achieve lower impedance than previous UHF resonators, have been demonstrated at frequencies as high as 1.2-GHz with a Q of 3,700, and 1.47-GHz (highest to date) with a Q of 2,300. The 1.2-GHz resonator exhibits a measured motional resistance of 560 k/spl Omega/ with a dc-bias voltage of 20 V, which is 6/spl times/ lower than measured on radial contour mode disk counterparts at the same frequency, and which can be driven down as low as 2 k/spl Omega/ when a dc-bias voltage of 100 V and electrode-to-resonator gap spacing of 460 /spl Aring/ are used. The above high Q and low impedance advantages, together with the multiple frequency, on-chip integration advantages afforded by electrostatically-transduced /spl mu/mechanical resonators, make this device an attractive candidate for use in the front-end RF filtering and oscillator functions needed by wireless communication devices.