{"title":"采用分布式栅极的AIGaN/GaN HEMT提高热性能","authors":"Maira Elksne, Abdullah Ai-Khalidi, E. Wasige","doi":"10.23919/EUMIC.2018.8539896)","DOIUrl":null,"url":null,"abstract":"This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 \\mu \\mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance\",\"authors\":\"Maira Elksne, Abdullah Ai-Khalidi, E. Wasige\",\"doi\":\"10.23919/EUMIC.2018.8539896)\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 \\\\mu \\\\mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539896)\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539896)","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance
This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only $1.3 \mu \mathrm{A/mm}$ at −20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.
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