{"title":"场效应二极管","authors":"F. Taghibakhsh","doi":"10.1109/ISDRS.2003.1272077","DOIUrl":null,"url":null,"abstract":"The fabrication of field effect diode (FED) as a planar pin diode with two gates over its intrinsic region using SOI technology is presented in this paper. The voltage applied to the gates, changes the barrier height against carriers and therefore modulates diode current. Based on an accurate numeric simulation, the operation of the device has been explained, the analytical I-V relationship has been extracted, dynamic characteristics of the device has been calculated and the effect of device parameters on its electrical behavior has been studied. Obtained results show that the FED realizes a voltage controlled voltage source.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The field effect diode\",\"authors\":\"F. Taghibakhsh\",\"doi\":\"10.1109/ISDRS.2003.1272077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication of field effect diode (FED) as a planar pin diode with two gates over its intrinsic region using SOI technology is presented in this paper. The voltage applied to the gates, changes the barrier height against carriers and therefore modulates diode current. Based on an accurate numeric simulation, the operation of the device has been explained, the analytical I-V relationship has been extracted, dynamic characteristics of the device has been calculated and the effect of device parameters on its electrical behavior has been studied. Obtained results show that the FED realizes a voltage controlled voltage source.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The fabrication of field effect diode (FED) as a planar pin diode with two gates over its intrinsic region using SOI technology is presented in this paper. The voltage applied to the gates, changes the barrier height against carriers and therefore modulates diode current. Based on an accurate numeric simulation, the operation of the device has been explained, the analytical I-V relationship has been extracted, dynamic characteristics of the device has been calculated and the effect of device parameters on its electrical behavior has been studied. Obtained results show that the FED realizes a voltage controlled voltage source.
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