采用先进集成技术的高可靠性和大批量生产的FRAM嵌入式智能卡

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. Pub Date : 2004-06-15 DOI:10.1109/VLSIT.2004.1345445

H. Joo, Y.J. Song, H.H. Kim, S.K. Kang, J. Park, Y. Kang, E. Y. Kang, S.Y. Lee, H. Jeong, Kinam Kim

{"title":"采用先进集成技术的高可靠性和大批量生产的FRAM嵌入式智能卡","authors":"H. Joo, Y.J. Song, H.H. Kim, S.K. Kang, J. Park, Y. Kang, E. Y. Kang, S.Y. Lee, H. Jeong, Kinam Kim","doi":"10.1109/VLSIT.2004.1345445","DOIUrl":null,"url":null,"abstract":"We developed FRAM embedded smartcard in which FRAM replace EEPROM and SRAM to improve the read/write cycle time and endurance of data memories in smartcard. Highly reliable sensing window for FRAM embedded smartcard was achieved by advanced integration technologies such as novel capacitor technology, multi-level encapsulating barrier layer (EBL) technology, and optimal inter-metallic dielectrics (IMD) technology.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Highly reliable and mass-productive FRAM embedded smartcard using advanced integration technologies\",\"authors\":\"H. Joo, Y.J. Song, H.H. Kim, S.K. Kang, J. Park, Y. Kang, E. Y. Kang, S.Y. Lee, H. Jeong, Kinam Kim\",\"doi\":\"10.1109/VLSIT.2004.1345445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed FRAM embedded smartcard in which FRAM replace EEPROM and SRAM to improve the read/write cycle time and endurance of data memories in smartcard. Highly reliable sensing window for FRAM embedded smartcard was achieved by advanced integration technologies such as novel capacitor technology, multi-level encapsulating barrier layer (EBL) technology, and optimal inter-metallic dielectrics (IMD) technology.\",\"PeriodicalId\":297052,\"journal\":{\"name\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2004.1345445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 12

摘要

我们开发了FRAM嵌入式智能卡，FRAM取代了EEPROM和SRAM，提高了智能卡中数据存储器的读写周期时间和耐用性。采用新型电容技术、多层封装阻挡层(EBL)技术、最优金属间介电体(IMD)技术等先进集成技术，实现了FRAM嵌入式智能卡高可靠的传感窗口。

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Highly reliable and mass-productive FRAM embedded smartcard using advanced integration technologies

We developed FRAM embedded smartcard in which FRAM replace EEPROM and SRAM to improve the read/write cycle time and endurance of data memories in smartcard. Highly reliable sensing window for FRAM embedded smartcard was achieved by advanced integration technologies such as novel capacitor technology, multi-level encapsulating barrier layer (EBL) technology, and optimal inter-metallic dielectrics (IMD) technology.

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Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.

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