R. Chaudhary, O. Ostinelli, A. Arabhavi, C. Bolognesi
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Bias-Free Operation of Type-II GaInAsSb/InP High Speed Uni-Traveling Carrier Photodiodes
We report the first bias-free operation of top-illuminated uniform Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes (UTC-PDs) for $\lambda =1.55\mu$m. A record-high zero-bias bandwidth of 78 GHz was achieved. The device includes a 100 nm uniform Ga0.81In0.19As0.65Sb0.35 absorber and 225 nm uniform InP collector layer.
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