一种新型q波段单片HEMT谐波混频器

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470995

R. Katz, S. Maas, A. Sharma, D. Smith

{"title":"一种新型q波段单片HEMT谐波混频器","authors":"R. Katz, S. Maas, A. Sharma, D. Smith","doi":"10.1109/MCS.1995.470995","DOIUrl":null,"url":null,"abstract":"A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<<ETX>>","PeriodicalId":325779,"journal":{"name":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"A novel monolithic HEMT harmonic mixer at Q-band\",\"authors\":\"R. Katz, S. Maas, A. Sharma, D. Smith\",\"doi\":\"10.1109/MCS.1995.470995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<<ETX>>\",\"PeriodicalId\":325779,\"journal\":{\"name\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1995.470995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1995.470995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

首次采用0.15 /spl μ m假晶InGaAs-GaAs HEMT工艺设计并制作了一种新型q波段单片谐波混频器。这款高性能混频器能够将q波段RF信号与s波段LO信号的12、14或16次谐波进行下变频，从而产生适合锁相环的信号。这个紧凑的混频器由反平行的HEMT肖特基二极管与集总元件中频和低通双工器和射频带通滤波器组成。实测数据与模拟结果一致。总芯片尺寸为1.0 mm/spl倍/2.5 mm

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A novel monolithic HEMT harmonic mixer at Q-band

A novel Q-band monolithic harmonic mixer has been designed and fabricated using the 0.15 /spl mu/m pseudomorphic InGaAs-GaAs HEMT process for the first time. This high performance mixer is capable of downconverting a Q-band RF signal with the 12th, 14th or 16th harmonic of a S-band LO signal to produce a signal suitable for a phase locked loop. This compact mixer consists of antiparallel HEMT Schottky diodes with a lumped element IF and LO diplexer and a RF band-pass filter. Measured data shows agreement between simulations and measurements. Total chip size is 1.0 mm/spl times/2.5 mm.<>

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来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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