{"title":"InGaAsP/InP双异质结构晶圆的光学研究","authors":"V. Rakovics","doi":"10.1109/CAOL.2010.5634207","DOIUrl":null,"url":null,"abstract":"Complex and informative luminescent spectra have been obtained by using visible sources for excitation of InGaAsP/InP double heterostructure diode wafers. The thin contact layer transforms the high energy exciting light to lower energy photons which can excite the active layer, although the InP confining layers are not transparent for primary exciting photon.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"327 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Optical investigation of InGaAsP/InP double heterostructure wafers\",\"authors\":\"V. Rakovics\",\"doi\":\"10.1109/CAOL.2010.5634207\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complex and informative luminescent spectra have been obtained by using visible sources for excitation of InGaAsP/InP double heterostructure diode wafers. The thin contact layer transforms the high energy exciting light to lower energy photons which can excite the active layer, although the InP confining layers are not transparent for primary exciting photon.\",\"PeriodicalId\":254986,\"journal\":{\"name\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"volume\":\"327 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAOL.2010.5634207\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Advanced Optoelectronics and Lasers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAOL.2010.5634207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical investigation of InGaAsP/InP double heterostructure wafers
Complex and informative luminescent spectra have been obtained by using visible sources for excitation of InGaAsP/InP double heterostructure diode wafers. The thin contact layer transforms the high energy exciting light to lower energy photons which can excite the active layer, although the InP confining layers are not transparent for primary exciting photon.
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