对SPI EEPROM存储器的功能和非功能信号的直接功率注入

2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo) Pub Date : 2015-12-17 DOI:10.1109/EMCCOMPO.2015.7358324

Mohammed Amellall, S. O. Land, R. Perdriau, M. Ramdani, A. Ahaitouf, M. Drissi

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引用次数: 2

摘要

本文研究SPI EEPROM存储器的传导抗扰性。介绍了一种宽带射频基带多路复用器的设计与实现。该多路复用器可以将射频噪声叠加到具有可控和可重复传输特性的功能基带信号上。基带路径具有测量的DC - 380MHz带宽，而射频路径(高达1W)具有150kHz - 5GHz带宽。该多路复用器用于比较EEPROM存储器的功能和非功能引脚的传导抗扰度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Direct power injection on functional and non-functional signals of SPI EEPROM memories

This paper deals with the conducted immunity of SPI EEPROM memories. The design and implementation of a wideband radio frequency-baseband multiplexer are described. This multiplexer makes it possible to superimpose radio frequency noise to a functional baseband signal with controlled and repeatable transfer characteristics. The baseband path has a measured DC - 380MHz bandwidth, while the radio frequency path (up to 1W) has a 150kHz - 5GHz bandwidth. This multiplexer is used to compare the conducted immunity of functional and non-functional pins of EEPROM memories with a single measurement set-up.

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2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo)

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