大多数场效应晶体管和双极结晶体管开关中的dV/dt效应

1981 IEEE Power Electronics Specialists Conference Pub Date : 1981-06-01 DOI:10.1109/PESC.1981.7083647

R. Severns

{"title":"大多数场效应晶体管和双极结晶体管开关中的dV/dt效应","authors":"R. Severns","doi":"10.1109/PESC.1981.7083647","DOIUrl":null,"url":null,"abstract":"Spurious turn-on due to dV/dt triggering is a real possibility in high speed switching circuits using MOSFETs or bipolar junction transistors (BJTs). This paper discusses the mechanisms leading to spurious turn-on, test methods to determine dV/dt limits, the effect of dV/dt turn-on circuit operation, and methods to minimize dV/dt triggering in practical circuits.","PeriodicalId":165849,"journal":{"name":"1981 IEEE Power Electronics Specialists Conference","volume":"279 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"dV/dt effects in mosfet and bipolar junction transistor switches\",\"authors\":\"R. Severns\",\"doi\":\"10.1109/PESC.1981.7083647\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spurious turn-on due to dV/dt triggering is a real possibility in high speed switching circuits using MOSFETs or bipolar junction transistors (BJTs). This paper discusses the mechanisms leading to spurious turn-on, test methods to determine dV/dt limits, the effect of dV/dt turn-on circuit operation, and methods to minimize dV/dt triggering in practical circuits.\",\"PeriodicalId\":165849,\"journal\":{\"name\":\"1981 IEEE Power Electronics Specialists Conference\",\"volume\":\"279 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1981-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1981 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1981.7083647\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1981.7083647","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 17

摘要

在使用mosfet或双极结晶体管(bjt)的高速开关电路中，由于dV/dt触发而导致的杂散导通是一种真实的可能性。本文讨论了导致假导通的机制，确定dV/dt极限的测试方法，dV/dt导通电路操作的影响，以及在实际电路中最小化dV/dt触发的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

dV/dt effects in mosfet and bipolar junction transistor switches

Spurious turn-on due to dV/dt triggering is a real possibility in high speed switching circuits using MOSFETs or bipolar junction transistors (BJTs). This paper discusses the mechanisms leading to spurious turn-on, test methods to determine dV/dt limits, the effect of dV/dt turn-on circuit operation, and methods to minimize dV/dt triggering in practical circuits.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1981 IEEE Power Electronics Specialists Conference

自引率

0.00%

发文量