用于超低电压应用的大体积驱动全差分放大器

D. Arbet, M. Kovác, V. Stopjaková, M. Potocný
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引用次数: 3

摘要

本文讨论了一种基于伪差分拓扑的全差分差分放大器(FDDA)的设计和分析,该放大器采用130 nm CMOS技术实现。所提出的FDDA在低至0.4 V的电源电压下可以可靠地工作。采用体积驱动技术设计了FDDA,并通过使用体积驱动输入晶体管确保了轨对轨(RtR)输入电压范围。此外,提出了基于FDDA拓扑结构的RtR输入/输出CMFB。输出电压范围接近RtR(±0.36 V), CMRR和PSRR分别达到60.2 dB和64.4 dB。在较宽的输出范围内,所提出的FDDA具有良好的线性性,从而达到−156 dB@1 mV的THD。此外,所提出的FDDA被用作超低电压-频率转换器的构建块。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Bulk-driven fully differential difference amplifier for ultra-low voltage applications
This paper deals with the design and analysis of a fully differential difference amplifier (FDDA) based on a pseudo differential topology that was implemented in a 130 nm CMOS technology. The proposed FDDA can reliably work with its power supply voltage as low as 0.4 V. The FDDA was designed using the bulk-driven technique, and Rail-to-Rail (RtR) input voltage range was ensured through the use of bulk-driven input transistors. Additionally, the RtR input/output CMFB, based on FDDA topology, was proposed. The output voltage range is near RtR (±0.36 V). The CMRR and PSRR of 60.2 dB and 64.4 dB was achieved, respectively. The proposed FDDA shows very good linearity in wide output range, thus the THD of −156 dB@1 mV was reached. Furthermore, the proposed FDDA was used as a building block of an ultra-low voltage-to-frequency converter.
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