{"title":"一种高精度、低插入损耗的DC-4GHz 6位数字衰减器","authors":"Yibing Wu, Jianquan Hu, Kaixue Ma","doi":"10.1109/ICET51757.2021.9451053","DOIUrl":null,"url":null,"abstract":"A DC to 4 GHz 6-bit digital attenuator with high accuracy and low insertion loss by enhancement/depletion (E/D) mode GaAs pseudomorphic high electron-mobility transistor (pHEMT) process is presented in this paper. The digital attenuator achieves a 31.5dB dynamic attenuation range stepped by 0.5dB with smaller than 2dB insertion loss and less than 0.36dB RMS attenuation error. The input and output return loss is less than -10dB for all attenuation states from DC to 4 GHz. Meanwhile the digital attenuator has built-in logic driving circuit which simplifies the control logic into a 6-bit positive voltage control. The total chip size is 2.7mm×1.95mm × 0.1 mm.","PeriodicalId":316980,"journal":{"name":"2021 IEEE 4th International Conference on Electronics Technology (ICET)","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A DC-4GHz 6-Bit Digital Attenuator with High Accuracy and Low Insertion Loss\",\"authors\":\"Yibing Wu, Jianquan Hu, Kaixue Ma\",\"doi\":\"10.1109/ICET51757.2021.9451053\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DC to 4 GHz 6-bit digital attenuator with high accuracy and low insertion loss by enhancement/depletion (E/D) mode GaAs pseudomorphic high electron-mobility transistor (pHEMT) process is presented in this paper. The digital attenuator achieves a 31.5dB dynamic attenuation range stepped by 0.5dB with smaller than 2dB insertion loss and less than 0.36dB RMS attenuation error. The input and output return loss is less than -10dB for all attenuation states from DC to 4 GHz. Meanwhile the digital attenuator has built-in logic driving circuit which simplifies the control logic into a 6-bit positive voltage control. The total chip size is 2.7mm×1.95mm × 0.1 mm.\",\"PeriodicalId\":316980,\"journal\":{\"name\":\"2021 IEEE 4th International Conference on Electronics Technology (ICET)\",\"volume\":\"9 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-05-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 4th International Conference on Electronics Technology (ICET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICET51757.2021.9451053\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 4th International Conference on Electronics Technology (ICET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICET51757.2021.9451053","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A DC-4GHz 6-Bit Digital Attenuator with High Accuracy and Low Insertion Loss
A DC to 4 GHz 6-bit digital attenuator with high accuracy and low insertion loss by enhancement/depletion (E/D) mode GaAs pseudomorphic high electron-mobility transistor (pHEMT) process is presented in this paper. The digital attenuator achieves a 31.5dB dynamic attenuation range stepped by 0.5dB with smaller than 2dB insertion loss and less than 0.36dB RMS attenuation error. The input and output return loss is less than -10dB for all attenuation states from DC to 4 GHz. Meanwhile the digital attenuator has built-in logic driving circuit which simplifies the control logic into a 6-bit positive voltage control. The total chip size is 2.7mm×1.95mm × 0.1 mm.
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