双射频等离子体增强脉冲激光沉积氮化钛薄膜的研究

H. Bhuyan, M. Escalona, S. Ibacache, M. J. Retamal, J. Valenzuela, F. Veloso, M. Favre, E. Wyndham, P. Saikia, C. Borgohain
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引用次数: 0

摘要

介绍了双射频等离子体增强脉冲激光沉积(RFPE-PLD)系统的物理原理和应用。利用RFPE-PLD系统在不同的实验条件下制备了氮化钛(TiN)薄膜,研究了背景双射频等离子体对PLD沉积过程的影响。讨论了在不同实验条件下对薄膜特性(包括表面形貌、氮浓度和沉积速率)进行控制的可行性。为了研究沉积膜性能与等离子体参数之间的关系,利用射频补偿朗缪尔探针测量了电子密度和等离子体温度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on the Dual RF Plasma Enhanced Pulsed Laser Deposition of Titanium Nitride Thin Film
Physics and application of a dual radio frequency plasma enhanced pulsed laser deposition (RFPE-PLD) system will be presented. Titanium nitride (TiN) thin films are prepared using the RFPE-PLD system at different experimental conditions to investigate the effect of the background dual RF plasma during PLD deposition. The feasibility of obtaining control over the thin film characteristics at different experimental conditions including surface topography, nitrogen concentration and the deposition rate will be discussed. In order to investigate the correlation between the deposited film properties and the plasma parameters, the electron density and plasma temperature are estimated by using an RF compensated Langmuir probe.
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