A. Kaneko, A. Yagishita, K. Yahashi, T. Kubota, M. Omura, K. Matsuo, I. Mizushima, K. Okano, H. Kawasaki, T. Izumida, T. Kanemura, N. Aoki, A. Kinoshita, J. Koga, S. Inaba, K. Ishimaru, Y. Toyoshima, H. Ishiuchi, K. Suguro, K. Eguchi, Y. Tsunashima
{"title":"高性能FinFET与掺杂隔离肖特基源/漏","authors":"A. Kaneko, A. Yagishita, K. Yahashi, T. Kubota, M. Omura, K. Matsuo, I. Mizushima, K. Okano, H. Kawasaki, T. Izumida, T. Kanemura, N. Aoki, A. Kinoshita, J. Koga, S. Inaba, K. Ishimaru, Y. Toyoshima, H. Ishiuchi, K. Suguro, K. Eguchi, Y. Tsunashima","doi":"10.1109/IEDM.2006.346926","DOIUrl":null,"url":null,"abstract":"High-performance CMOS-FinFET with dopant-segregated Schottky source/drain (DS-Schottky S/D) technology has been demonstrated. Thanks to the low parasitic resistance in DS-Schottky S/D, high drive current of 960 muA/mum was achieved for nFET with Lg = 15 nm and Wfin =15 nm at Vd= 1.0 V and Ioff= 100 nA/mum. Furthermore, the propagation delay time has been successfully improved down to less than 5 ps in the ring oscillator with DS-Schottky S/D CMOS-FinFET with 15 nm gate length","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"53","resultStr":"{\"title\":\"High-Performance FinFET with Dopant-Segregated Schottky Source/Drain\",\"authors\":\"A. Kaneko, A. Yagishita, K. Yahashi, T. Kubota, M. Omura, K. Matsuo, I. Mizushima, K. Okano, H. Kawasaki, T. Izumida, T. Kanemura, N. Aoki, A. Kinoshita, J. Koga, S. Inaba, K. Ishimaru, Y. Toyoshima, H. Ishiuchi, K. Suguro, K. Eguchi, Y. Tsunashima\",\"doi\":\"10.1109/IEDM.2006.346926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-performance CMOS-FinFET with dopant-segregated Schottky source/drain (DS-Schottky S/D) technology has been demonstrated. Thanks to the low parasitic resistance in DS-Schottky S/D, high drive current of 960 muA/mum was achieved for nFET with Lg = 15 nm and Wfin =15 nm at Vd= 1.0 V and Ioff= 100 nA/mum. Furthermore, the propagation delay time has been successfully improved down to less than 5 ps in the ring oscillator with DS-Schottky S/D CMOS-FinFET with 15 nm gate length\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"53\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Performance FinFET with Dopant-Segregated Schottky Source/Drain
High-performance CMOS-FinFET with dopant-segregated Schottky source/drain (DS-Schottky S/D) technology has been demonstrated. Thanks to the low parasitic resistance in DS-Schottky S/D, high drive current of 960 muA/mum was achieved for nFET with Lg = 15 nm and Wfin =15 nm at Vd= 1.0 V and Ioff= 100 nA/mum. Furthermore, the propagation delay time has been successfully improved down to less than 5 ps in the ring oscillator with DS-Schottky S/D CMOS-FinFET with 15 nm gate length
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